Submicron processing of InAs based quantum wells: A new, highly selective wet etchant for AlSb

Band hybridization and spin-splitting in InAs/AlSb/GaSb type II and broken-gap quantum wells

We present a detailed theoretical study on the features of band hybridization and zero-field spin-splitting in InAs/AlSb/GaSb quantum wells QWs . An eight-band k ·p approach is developed to calculate the electronic subband structure in such structures. In the absence of the AlSb layer, the hybridized energy gaps can be observed at the anticrossing points between the lowest electron subband and ...

Physical properties of short wavelength 2.6μm InAs/AlSb-based quantum cascade lasers

There are several challenges in the development of semiconductor lasers for the near mid-infrared region of 2-3 μm. Approaches being developed to produce lasers in this range include extending the wavelength of inter-band diode lasers which perform relatively well below ~2.5 μm. Such lasers are, however, strongly affected by increased optical losses and non-radiative Auger recombination which d...

THERMAL CONDUCTIVITY OF InAs/AlSb SUPERLATTICES

In this work, we present experimental studies on the cross-plane thermal conductivity of InAs/AlSb superlattices. The thermal conductivities of MBE grown InAs/AlSb superlattices are measured using the 3ω method from 80-300 K. The influence of the growth temperature and post annealing is investigated. Significant reductions in thermal conductivity are observed in these superlattices compared to ...

InAs Quantum Dots in Symmetric InGaAs/GaAs Quantum Wells

The self-assembled InAs quantum dots (QDs) are the subject of substantial interest during last fifteen years due to both fundamental scientific and application reasons. In these systems, the strong localization of an electronic wave function leads to an atomic-like electronic density of states and permits to realize the novel and improved photonic and electronic devices. Microlectronic and opto...

Study of Selective Wet Etching of Titanium towards Copper in Hydrofluoric Free Etchant